| GeSi/Si共振隧穿二极管 |
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| 引用本文： | 郭维廉.GeSi/Si共振隧穿二极管[J].微纳电子技术,2008,45(11). |
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| 作者姓名： | 郭维廉 |
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| 作者单位： | 天津工业大学,信息与通讯学院,天津,300160;专用集成电路国家重点实验室,石家庄,050051;天津大学,电子信息工程学院,天津,300072 |
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| 摘 要： | GeSi/Si共振隧穿二极管主要包括空穴型GeSi/SiRTD、应力型GeSi/SiRTD和GeSi/Si带间共振隧穿二极管三种结构。着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。
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| 关 键 词： | GeSi/Si共振隧穿二极管 GeSi/Si异质结 GeSi/Si带间共振隧穿二极管 能带结构 材料结构 |
GeSi/Si Resonant Tunneling Diodes |
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| GUO Weilian.GeSi/Si Resonant Tunneling Diodes[J].Micronanoelectronic Technology,2008,45(11). |
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| Authors: | GUO Weilian |
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| Affiliation: | Guo Weilian1,2,3(1.School of Information , Communication Eng.,Tianjin Polytechnic University,Tianjin 300160,China,2.National Key Laboratory of ASIC,Shijiazhuang 050051,3.School of Electronic Information Eng.,Tianjin University,Tianjin 300072,China) |
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| Abstract: | Silicon based resonant tunneling diodes(Si-RTDs)mainly include three structures:the hole type GeSi/Si RTD,strain type GeSi/Si RTD and GeSi/Si interband RTD(RITD).The strain GeSi/Si and GeSi/Si RITD are illustrated emphatically.Because the band offset on GeSi/Si heterojunction mainly occurs beween valence bands of GeSi and Si(ΔEv>ΔEc)and the potential well for electron is more shallow than that for hole,it is suitable for hole type RTD.For the intraband resonant tunneling,the n-type GeSi/Si RTD can be formed by the strain Si layer or the strain GeSi layer.The GeSi/Si RITD is a promising structure for good performance devices and has a wide prospect in applications. |
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| Keywords: | GeSi/Si RTD GeSi/Si heterojunction GeSi/Si RITD band structure material structure |
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