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Si/Si直接键合界面热应力模型及模拟
引用本文:陈新安,黄庆安.Si/Si直接键合界面热应力模型及模拟[J].微纳电子技术,2006,43(11):541-545.
作者姓名:陈新安  黄庆安
作者单位:1. 绍兴文理学院,微电子实验室,浙江,绍兴,312000
2. 东南大学MEMS教育部重点实验室,南京,210096
基金项目:国家高技术研究发展计划(863计划);国家自然科学基金
摘    要:根据Suhir的双金属带的热应力分布理论,建立了Si/Si直接键合界面应力模型,推导出了由于高温引起的正应力、剪切应力和剥离应力的解析方程。并且应用模拟软件Matlab对热应力进行了模拟,直观地表现了键合界面应力的大小及其分布情况,对键合工艺有一定的指导意义。

关 键 词:Si/Si直接键合  界面应力  模型  模拟
文章编号:1671-4776(2006)11-0541-05
收稿时间:2006-04-30
修稿时间:2006年4月30日

Model and Simulation of the Interfacial Stresses of Si/Si Direct Bonding
CHEN Xin-an,HUANG Qing-an.Model and Simulation of the Interfacial Stresses of Si/Si Direct Bonding[J].Micronanoelectronic Technology,2006,43(11):541-545.
Authors:CHEN Xin-an  HUANG Qing-an
Affiliation:1.Laboratory of Microelectronics, Shaoxing College of Arts and Sciences, Shaoxing 312000, China; 2.Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
Abstract:A physical model of the interfacial stresses of Si/Si direct bonding was presented based on the Suhire theory of stresses presented in bimetal strips, and the analytical equations of the normal stresses, the shearing stresses and the peeling stresses were derived according to the stress model. Then, Matlab stress simulation tool was used for the interfical stresses. The simulation results directly show the distribution of the interfacial stresses of Si/Si direct bonding. The results are valuable for bonding process.
Keywords:Si/Si direct bonding  interfacial stresses  model  simulation
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