A silicon-on-insulator metal–semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density |
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| Affiliation: | 1. Physics Department, Faculty of Science, Damietta University, Damietta, Egypt;2. Chemistry Department, Faculty of Science, Damietta University, Damietta, Egypt;3. Chemistry Department, Faculty of Science, Tanta University, Tanta, Egypt;1. Institut des Matériaux Jean Rouxel (IMN), UMR 6502, Université de Nantes, 2 rue de la Houssinière, BP 92208, Nantes 44000, France;2. MOLTECH Anjou, UMR 6200, Université de Nantes, 2 rue de la Houssinière, BP 92208, Nantes 44000, France;3. IRT Jules Verne, Chemin du Chaffault, 44340 Bouguenais, France;1. Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542, Egypt;2. Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia;3. Nano-Science & Semiconductor Labs, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;4. Physics Department, Faculty of Science, Assiut University, Assiut, Egypt;5. Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;6. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow, 32/46, 02-668 Warszawa, Poland;1. Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, PR China;2. School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167, PR China;3. Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin Engineering University, Harbin 150001, PR China |
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| Abstract: | We describe a novel silicon-on-insulator metal–semiconductor field-effect transistor with an L-shaped buried oxide (LB-SOI MESFET) and its maximum output power density (Pmax). To optimize the surface electric field and improve the breakdown voltage, we eliminated part of the oxide and replaced it with n-type silicon. By creating an n+–n region on the source side and modifying the electric field distribution, the breakdown voltage improved by 42% compared to a conventional device. Channel control is realized by varying the depletion layer width underneath the metal gate contact. This modulates the thickness of the conducting channel and thus controls the current between the source and the drain. Continuation of the n-type silicon on top of the buried oxide after the gate metal changes the depletion layer and increases the total channel charge for conduction, so the drain current increases by a factor of five compared to a conventional SOI MESFET. In addition, Pmax is increased by a factor of 17.7 with respect to a conventional structure, which is important for large-signal analog applications. Consequently, our novel LB-SOI MESFET has superior electrical characteristics. |
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| Keywords: | L-shaped buried oxide Silicon on insulator Metal–semiconductor field-effect transistor Maximum output-power density |
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