Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): Effect of device size variations |
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| Affiliation: | 1. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India;2. Nanoscience Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur 416004, India;3. Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India;4. Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur, 416004, India;1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, Iran;2. School of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;2. Singapore University of Technology & Design (SUTD), Singapore;3. ESAT Dept. KULeuven, Leuven, Belgium;1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Spain;2. Institut de Microelectrònica de Barcelona, Centre Nacional de Microelectrònica (IMB-CNM, CSIC), Spain |
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| Abstract: | The purpose of this work is to investigate the effect of device size and frequency on memristor based Resistive Random Access Memory (RRAM). The objects of investigation are effect on memory window, Low Resistance State (LRS) and High Resistance State (HRS) with memristor device size varied from 5 nm to 50 nm. Moreover, effect of device size variation on lifetime (τ) reliability of memristor device has also been explored. The results evidences that, memristor possess higher memory window and lifetime (τ) in the lower device size with lower frequencies. This subsequently consequences into lower data losses in the overall memory architecture having memristors as the basic building block. Authors have analysed effective variation in LRS and HRS by accomplishing Monte-Carlo simulation. The results of Monte-Carlo simulation suggests the LRS to follow Weibull distribution whereas HRS to go along with Gaussian distribution for less read and write errors. |
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| Keywords: | Memristor RRAM Memory window Reliability Monte-Carlo |
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