Effect of deposition power in fabrication of highly efficient CdS:O/CdTe thin film solar cell by the magnetron sputtering technique |
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| Affiliation: | 1. Solar Energy Research Institute, National University of Malaysia, 43600 Bangi, Selangor, Malaysia;2. Department of Electrical & Electronic Enginering, Faculty of Science & Engineering, International Islamic University Chittagong, 154/A, College Road, Chittagong 4203, Bangladesh;3. Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia;4. Department of Electrical, Electronic and System Engineering, Faculty of Engineering and Built Environment, National University of Malaysia, 43600 Bangi, Selangor, Malaysia;1. Department of Physics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700009, India;2. Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India;1. Institute of Polymeric Materials, Sahand University of Technology, Tabriz, Iran;2. Faculty of Polymer Engineering, Sahand University of Technology, Tabriz, Iran;1. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis-El Manar University, 2092, Tunisia;2. King Khalid University, Faculty of Science, Physics, Department, P.O. Box 9004, Abha 61413, Saudi Arabia;3. Laboratoire de Physique des Rayonnements, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba 23000, Algeria |
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| Abstract: | Polycrystalline II–VI semiconductor materials such as oxygenated CdS have a wide and tunable band gap (≥2.5 eV) which plays an important role in increasing the light absorption capacity of CdTe absorber. In this study, the ultra-thin CdS:O and CdTe films were deposited by the sputtering technique and the optimum condition of deposition power is investigated. The prepared ultra-thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), UV–vis spectrometry, Hall Effect and current–voltage measurements techniques. The complete cell was then fabricated by the sputtering technique with a novel configuration of ‘glass/FTO/ZnO:Sn/CdS:O/CdTe/C:Cu/Ag’. To avoid the pin hole effect, the high resistive ZnO:Sn layer was deposited as a buffer layer in between the FTO and CdS:O films. It has been observed that the cell performance parameters are found to be varied with deposition power of CdO:S films and an overall conversion efficiency of 10.27% was achieved. |
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| Keywords: | RF power CdS:O CdTe ZnO:Sn Structural properties Optical properties Cell efficiency |
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