首页 | 官方网站   微博 | 高级检索  
     

CCl_4在低温表面上的紫外激光脱附
引用本文:张振满,杨新菊,侯惠奇,秦启宗.CCl_4在低温表面上的紫外激光脱附[J].量子电子学报,1996(4).
作者姓名:张振满  杨新菊  侯惠奇  秦启宗
作者单位:复旦大学激光化学研究所
摘    要:本文研究了CCl4低温(130K)吸附于石英表面上经紫外激光辐照后引起的脱附过程。由时间分辨四极质谱测得脱附产物的飞行时间谱表明,在高激光能量密度下,表面上吸附厚层的CCl4分子发生爆炸脱附,超热的CCl4分子最高动能可达3.5eV。

关 键 词:激光诱导脱附,CCl_4,超热分子

UV Laser Desorption of CCl_4 Absorbed on Low Temperature Surface
Zhang Zhenman,Yang Xinju,Hou Huiqi,Qin Qizong.UV Laser Desorption of CCl_4 Absorbed on Low Temperature Surface[J].Chinese Journal of Quantum Electronics,1996(4).
Authors:Zhang Zhenman  Yang Xinju  Hou Huiqi  Qin Qizong
Abstract:The ultraviolet (355 nm) laser induced desorption of CCl4 cryogenic film on quartz surface at 130 K is investigated using time-resolved quadrupole mass spectroscopy. The measured time-of- flight spectra of desorbed species show that the explosive desorption takes place at high laser fluence and high multilayers of CCl4. The hyperthermal CCl4 molecule with kinetic energy of 3.5eV is obtained at laser fluence of 75 mJ/cm2.
Keywords:laser-induced desorption  CCl_4  hyperthermal molecules
本文献已被 CNKI 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号