| 分数阶记忆元件通用等效电路的设计 |
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| 引用本文： | 尚涛,甘朝晖,余磊,左自辉.分数阶记忆元件通用等效电路的设计[J].微电子学,2022,52(3):399-405. |
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| 作者姓名： | 尚涛 甘朝晖 余磊 左自辉 |
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| 作者单位： | 武汉科技大学 信息科学与工程学院, 武汉 430081;中国铁道科学研究院集团有限公司, 北京 100081 |
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| 基金项目： | 国家自然科学基金资助项目(41571396) |
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| 摘 要： | 根据分数阶记忆元件之间的转换关系,设计了一种分数阶记忆元件通用等效电路。该等效电路在不改变电路拓扑结构的情况下,通过选择五个阻抗元件的类型,可以将任意一种接地型分数阶记忆元件转换为任意一种浮地型分数阶记忆元件。在仿真实验中,根据提出的通用等效电路,分别实现了三种分数阶记忆元件。对三种分数阶记忆元件的特性进行了分析,验证了该等效电路的正确性。
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| 关 键 词： | 分数阶记忆元件 等效电路 浮地型 |
| 收稿时间： | 2021/9/12 0:00:00 |
Design of a General Equivalent Circuit for Fractional-Order Memory Element |
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| SHANG Tao,GAN Zhaohui,YU Lei,ZUO Zihui.Design of a General Equivalent Circuit for Fractional-Order Memory Element[J].Microelectronics,2022,52(3):399-405. |
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| Authors: | SHANG Tao GAN Zhaohui YU Lei ZUO Zihui |
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| Affiliation: | School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, 430081, P.R.China; China Academy of Railway Sciences Corporation Limited, Beijing 100081, P.R.China |
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| Abstract: | According to the conversion relationship between fractional-order memory elements, a general equivalent circuit of fractional-order memory elements was designed. Without changing the topological structure of circuit, the equivalent circuit could convert any grounding fractional-order memory element into any floating fractional-order memory element by selecting the types of five impedance elements. In the simulation experiment, three kinds of fractional-order memory elements were realized respectively according to the proposed general equivalent circuit, and the characteristics of three kinds of fractional-order memory element were analyzed. The correctness of the equivalent circuit was verified. |
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| Keywords: | fractional-order memory element equivalent circuit floating |
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