| MOS器件的X射线辐照效应 |
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| 引用本文： | 刘远,李若瑜,恩云飞,李斌,罗宏伟,师谦.MOS器件的X射线辐照效应[J].微电子学,2005,35(5):497-500. |
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| 作者姓名： | 刘远 李若瑜 恩云飞 李斌 罗宏伟 师谦 |
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| 作者单位： | [1]华南理工大学微电子研究所,广东广州510640 [2]信息产业部电子第五研究所,广东广州510610 |
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| 基金项目： | 电子元器件可靠性物理及其应用技术国家重点实验室基金资助项目（51433030404DZ1501） |
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| 摘 要： | 研究了在10keVX射线辐照情况下，MOS器件的阈值电压随总剂量和剂量率的改变而变化的趋势。实验结果表明，辐照后，与用Co^60作为辐射源辐照所做实验结果明显不同的是，NMOS器件的阈值电压漂移幅度远大于PMOS器件的漂移幅度。文中对这种现象进行了讨论。
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| 关 键 词： | MOS器件 辐照 剂量率 总剂量 X射线 |
| 文章编号： | 1004-3365（2005）05-0497-04 |
| 收稿时间： | 2004-12-17 |
| 修稿时间： | 2004-12-172005-02-25 |
Effects of X-Ray Radiation on MOS Devices |
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| LIU Yuan, LI Ruo yu, EN Yun-fei, LI bin, LUO Hong-weie, SHI Qian.Effects of X-Ray Radiation on MOS Devices[J].Microelectronics,2005,35(5):497-500. |
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| Authors: | LIU Yuan LI Ruo yu EN Yun-fei LI bin LUO Hong-weie SHI Qian |
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| Affiliation: | 1. Institute of Microelectronics, South China University of Technology, Guangzhou, Guangdong 510640, P. R. China; 2,China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, Guangdong 510610, P. R. China |
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| Abstract: | Effects of total close and dose rates on threshold voltage of MOS devices in 10 keV X-ray environment are analyzed in this paper. Results show that, after radiation, the threshold voltage drift of NMOS transistors is larget than that of PMOS devices, which is different from the experimental results in the Co^60 radiation environment. Explanations for this phenomenon are also given. |
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| Keywords: | MOS device Radiation Dose rate Total dose X-ray |
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