| 一种新颖的高性能带隙基准的设计与分析 |
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| 引用本文： | 廉礼,李平,张国俊.一种新颖的高性能带隙基准的设计与分析[J].微电子学,2009,39(3). |
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| 作者姓名： | 廉礼 李平 张国俊 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 摘 要： | 提出了一种新颖的分段线性补偿带隙基准,该补偿技术通过巧妙地运用带隙输出电压与三极管开启电压VBE的关系来实现.电路设计中,考虑了基准电压的电源抑制特性、线性调整率、电路的稳定性、功耗、芯片面积等各方面的因素,使得该电路很适合工程应用.全电路由BiCMOS工艺实现,并通过HSPICE仿真.结果表明,基准输出电压约1.169 V,有效温度系数仅为2.1×10-6/℃;室温下,电源抑制比为63 dB@1 kHz,功耗70μW(3 V电源).
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| 关 键 词： | 带隙基准源 曲率补偿 电源抑制 |
Design and Analysis of a Novel High Performance Bandgap Reference |
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| LIAN Li,LI Ping,ZHANG Guojun.Design and Analysis of a Novel High Performance Bandgap Reference[J].Microelectronics,2009,39(3). |
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| Authors: | LIAN Li LI Ping ZHANG Guojun |
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| Affiliation: | State Key Laboratory of Elec.Thin Films and Integr.Dev.;Univ.of Elec.Sci.& Technol.of China;Chengdu;Sichuan 610054;P.R.China |
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| Abstract: | A novel piecewise-linear compensated bandgap reference source was presented.In this circuit,relationship of bandgap voltage with bipolar transistor's on-voltage was utilized to obtain compensated voltage in high temperature range.With PSR,line regulation,loop stability,power dissipation and chip area taken into consideration,the circuit was optimized for engineering application.Results from simulation based on BiCMOS process indicated that the circuit had a VREF of about 1.169 V,a temperature coefficient of... |
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| Keywords: | Bandgap reference source Curvature compensation Power supply rejection |
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