Development of a magnetron-enhanced plasma process for tungstenetchback with response-surface methodology

A two-step etchback process to form tungsten plugs in submicron contacts and vias has been developed. the process uses an Applied Materials Inc., P5000 WCVD magnetron-enhanced, single-wafer system with an experimental design and response-surface methodology. Tungsten is first etched with an Ar/SF₆ mixture until excited N₂ molecules from the underlying TiN adhesion layer are detected in the plasma. Residual TiN is then etched for a fixed time with an Ar/Cl ₂ plasma. Both steps employ a rotating 0.5-Hz magnetic field. Although the use of the magnetic field has no pronounced effect on the etch rate of either film, it provides broad regions of high etch uniformity. In addition, the DC-bias voltage measured as part of the TiN study decreases with increasing magnetic field strength without reducing the etch rate of the film