硅应力缓冲衬底上GaAs薄层转移探索

本文研究晶格矢配较大的Ⅲ－Ⅴ族化合物向Si基底转移薄层的技术，为此制备了Si/SiO2/Si结构的应力缓冲衬底。利用智能切割（smart-cut）技术制备薄层GaAs并以低温SiO2层过渡与应力缓冲衬底相键合，达到GaAs向Si基底的转移目的。并对结果进行了分析和讨论，认为该技术是可行的。同时特别强调了低温淀积SiO2层的完美性对最终转移的GaAs薄层的完整性是重要的。

Explore of Transfer GaAs thin Layer onto Si Compliant Substrate

In this paper the explore of transfomation between lattice mismatch layers such as GaAs/Si.For this propose the compliat substrate Si/SiO 2/Si structure is fabricated and the thin layer of GFaAs is obtained by smart cut method,which are bonded to comopliat substrate with low temperature SiO 2 as transition layer.The transfer of thin layer GaAs onto Si were achived.The results were analysed and discused,in which the feasiblity of transfer process is concluded.And it was emphasized that the perfact of layer of SiO 2 with low temperture deposited is important for resulting completion of GaAs layer trasferred.