应变Si1-xGex (100)电子有效质量研究

基于结合形变势的KP理论框架，对应变Si1-xGex/(100)Si材料电子有效质量（包括导带能谷电子纵、横向有效质量，导带底电子态密度有效质量及电子电导有效质量）进行了系统的研究。结果表明：应变Si1-xGex/(100)Si材料导带能谷电子纵、横向有效质量在应力的作用下没有变化，其导带底电子态密度有效质量在Ge组份较小时随着x的增加而显著减小。此外，其沿100]方向的电子电导有效质量随应力明显降低。以上结论可为应变Si1-xGex/(100)Si材料电学特性的研究提供重要理论依据。

Study on Effective Mass of Electron in Strained Si1-xGex (100)

With the framework of K.P method with the help of perturbation theory, effective masses of electron were systematically studied in strained Si1-xGex/(100)S, including the longitudinal and transverse masses, density of state effective mass and conductivity effective mass of electron. It is found that the longitudinal and transverse masses are unchanged under strain, and density of state effective mass of electron decreases obviously with the increasing Ge fraction (x), and 100] directional conductivity effective masses decrease due to strain. The results obtained can provides valuable references to the electrical property of strained Si1-xGex/(100)Si.