一种背栅极冷阴极器件中纳米线表面电场的分析

利用静电场理论计算了背栅极冷阴极器件的纳米线附近电场,给出电场分布的表示式及J-V曲线,并分析了几何参数对纳米线顶端表面电场的影响.结果表明,纳米线顶端表面产生巨大的电场,随着离纳米线顶端表面距离的增大,电场迅速下降;纳米线突出栅孔的长度(L-d1)越大,纳米线半径r0、栅孔半径R以及栅极与阳极间距d2越小,则纳米线顶端表面电场越强,而d2较大时d2对表面电场的影响很弱;纳米线顶端边缘电流密度J随着阳极与栅极电压的增加而指数增大.

Electric Field Analyses of an Individual Nanowire in a Gated Field Emission Cold Cathode Devices

In our works, the influences of some parameters of a nanowires field emission cold cathode device on the electric field of the individual nanowire top surface are explored. The spatial distributions of the electric field intensity near the top of the nanowire were analytically calculated on the basis of classical electrostatic theory. And,the external electric field outside of the nanowire surface were expressed by analytic equation. The theoretical analysis showd that the electric field strength is very strongly near the top of the nanowire, and drops abruptly with the increasing of the distance. The electric field strength increases with the decreasing of the gate hole radius, nanowires radius and gate-anode spacing d2 remarkably as a region of small gate-anode distance, but the effect of the gate-anode spacing on the electric field of nanowire top surface is very weakly as the region of a larger gate-anode distance.The electric field intensity of the nanowire top surface increases very much with the increasing of the over length (L-d1) of the individual nanowire from the gate. And the current density of nanowire top edge increases with applied anode voltage Va and the applied gate voltage Vg.