| 与Si 工艺兼容的Si/ SiGe/ Si HBT 研究 |
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| 引用本文： | 廖小平.与Si 工艺兼容的Si/ SiGe/ Si HBT 研究[J].电子器件,2001,24(4):274-278. |
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| 作者姓名： | 廖小平 |
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| 作者单位： | 东南大学微电子中心, |
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| 摘 要： | 我们对Si/SiGe/Si HBT及其Si兼容工艺进行了研究，在研究了一些关键的单项工艺的基础上，提出了五个高速Si/SiGe/Si HBT结构和一个低噪声Si/SiGe/Si HBT结构，并已研制成功台面结构Si/SiGe/Si HBT和低噪声Si/SiGe/Si HBT，为进一步高指标的Si/SiGe/Si HBT的研究建立了基础。
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| 关 键 词： | 兼容工艺 硅 锗化硅 异质结双极型晶体管 |
| 文章编号： | 1005-9490(2001)04-0274-05 |
| 修稿时间： | 2001年5月30日 |
The Study of Si/ SiGe/ Si HBT and
Its Compatibility with Si Process |
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| L I A O X iaop ing.The Study of Si/ SiGe/ Si HBT and
Its Compatibility with Si Process[J].Journal of Electron Devices,2001,24(4):274-278. |
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| Authors: | L I A O X iaop ing |
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| Affiliation: | Southeast Univers ity |
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| Abstract: | We have conducted researches on Si/SiGe/Si HBT and its compatibility with Si process. Based on some key single processes, five high frequency constructions and one low noise construction are put up, and the mesa Si/SiGe/Si HBT and the low noise Si/SiGe/Si HBT are made out. Based on above researches, the better Si/SiGe/Si HBT will be made out. |
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| Keywords: | Si/SiGe/Si HBT compatibility with Si process |
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