| 磁控溅射AlN介质的14W/mm AlGaN/GaN MIS-HEMT |
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| 引用本文： | 任春江,陈堂胜,焦刚,耿涛,薛舫时,陈辰.磁控溅射AlN介质的14W/mm AlGaN/GaN MIS-HEMT[J].中国电子科学研究院学报,2009,4(2). |
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| 作者姓名： | 任春江 陈堂胜 焦刚 耿涛 薛舫时 陈辰 |
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| 作者单位： | 南京电子器件研究所单片集成电路与模块国家重点实验室,南京,210016 |
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| 摘 要： | 介绍了一种采用磁控溅射AlN介质作为绝缘层的的SiC衬底AlGaN/GaN MIS-HEMT.器件研制中采用了凹槽栅和场板结构.采用MIS结构后,器件击穿电压由80 V提高到了180 V以上,保证了器件能够实现更高的工作电压.在2 GHz、75 V工作电压下,研制的200μm栅宽AlGaN/GaNMIS-HEMT输出功率密度达到了14.4 W/mm,器件功率增益和功率附加效率分别为20.51 dB和54.2%.
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| 关 键 词： | 高电子迁移率晶体管 电流崩塌 |
14 W/mm AlGaN-GaN MIS-HEMTs with Magnetron Sputtered AlN Dielectric as Gate Insulator |
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| REN Chun-jiang,CHEN Tang-sheng,JIAO Gang,GENG Tao,XUE Fang-shi,CHEN Chen.14 W/mm AlGaN-GaN MIS-HEMTs with Magnetron Sputtered AlN Dielectric as Gate Insulator[J].Journal of China Academy of Electronics and Information Technology,2009,4(2). |
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| Authors: | REN Chun-jiang CHEN Tang-sheng JIAO Gang GENG Tao XUE Fang-shi CHEN Chen |
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| Affiliation: | National Key Laboratory of Monolithic Integrated Circuits and Modules;Nanjing electron devices institute;Nanjing 210016;China |
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| Abstract: | An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with magnetron sputtered AlN dielectric as gate insulator,manufactured on a semi-insulating SiC substrate is introduced in this paper. Gate recessing technique and field plate structure are both applied in this design. With the application of MIS configuration on a gate recessed AlGaN/GaN HEMT with field plate,breakdown voltage is raised from 80 V to over 180 V,leading to an improvement in operating voltage. At 2 GHz a... |
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| Keywords: | AlGaN/GaN MIS |
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