| RTD/HEMT串联型RTT的设计与研制 |
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| 引用本文： | 齐海涛,李亚丽,张雄文,冯震,商耀辉,郭维廉.RTD/HEMT串联型RTT的设计与研制[J].半导体学报,2007,28(7):1107-1111. |
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| 作者姓名： | 齐海涛 李亚丽 张雄文 冯震 商耀辉 郭维廉 |
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| 作者单位： | 天津大学电子信息工程学院，天津 300072;中国电子科技集团公司第十三研究所，石家庄 050051;中国电子科技集团公司第十三研究所，石家庄 050051;中国电子科技集团公司第十三研究所，石家庄 050051;中国电子科技集团公司第十三研究所，石家庄 050051;中国电子科技集团公司第十三研究所，石家庄 050051;天津大学电子信息工程学院，天津 300072 |
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| 基金项目： | 国防重点实验室基金
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中国博士后科学基金 |
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| 摘 要： | 依据RTD/HEMT串联型RTT的概念,设计了RTD/HEMT单片集成材料结构,该结构采用分子束外延技术生长.采用湿法化学腐蚀、金属剥离、台面隔离和空气桥互连技术,研制了RTD/HEMT串联型RTT,并对RTT及RTT中RTD和HEMT的直流特性进行了测试.测试结果表明:在室温下,器件具有明显的栅控负阻特性,正接型RTT的最大峰谷电流之比在2.2左右,反接型RTT的最大峰谷电流之比在4.6左右.实验为RTD/HEMT串联型RTT性能的优化和RTD/HEMT单片集成电路的研制奠定了基础.
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| 关 键 词： | 共振隧穿晶体管 共振隧穿二极管 高电子迁移率晶体管 电流峰谷比 |
| 文章编号： | 0253-4177（2007）07-1107-05 |
| 收稿时间： | 1/24/2007 2:59:47 PM |
| 修稿时间： | 2007-01-24 |
Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor |
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| Qi Haitao,Li Yali,Zhang Xiongwen,Feng Zhen,Shang Yaohui and Guo Weilian.Design and Fabrication of RTD/HEMT Series Connection ResonantTunneling Transistor[J].Chinese Journal of Semiconductors,2007,28(7):1107-1111. |
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| Authors: | Qi Haitao Li Yali Zhang Xiongwen Feng Zhen Shang Yaohui and Guo Weilian |
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| Affiliation: | School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China |
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| Abstract: | Based on the conception of RTD/HEMT series connection resonant tunneling transistors,an RTD/HEMT monolithic integration material structure was designed and grown by molecular beam epitaxy.RTT was fabricated using wet chemical etching,metal lift-off,mass isolation,and air bridge technologies.The device has a distinct gate-controlled negative differential resistance.The maximal peak-to-valley current ratio (PVCR) of the forward direction connection RTT is about 2.2 and the maximal PVCR of the backward direction connection RTT is about 4.6.This experiment lays a foundation for the optimization of RTT and RTD/HEMT monolithic integration circuit development. |
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| Keywords: | resonant tunneling transistor resonant tunneling diode high electron mobility transistor PVCR |
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