| NANOSCALE STRAINED-Si MOSFET PHYSICS AND MODELING APPROACHES:A REVIEW |
| |
| 作者姓名： | Amit Chaudhry J. N. Roy Garima Joshi |
| |
| 摘 要： | In this paper, an attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied in this paper that consider the effect of strain on the devices and their comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits and there is a strong need of an analytical model which describes the complete physics of the strain technology.
|
| 关 键 词： | 应变硅技术 MOSFET 建模方法 纳米级 物理 展望 设备模型 应变效应 |
| 修稿时间： | 5/9/2010 3:49:17 AM |
Nanoscale strained-Si MOSFET physics and modeling approaches: a review |
| |
| Amit Chaudhry,J. N. Roy,Garima Joshi.NANOSCALE STRAINED-Si MOSFET PHYSICS AND MODELING APPROACHES:A REVIEW[J].Chinese Journal of Semiconductors,2010,31(10):104001-5. |
| |
| Authors: | Amit Chaudhry J N Roy and Garima Joshi |
| |
| Affiliation: | University Institute of Engineering and Technology, Panjab University, Chandigarh 91160047, India;Solar Semiconductor Private Limited, Hyderabad 91510001, India;University Institute of Engineering and Technology, Panjab University, Chandigarh 91160047, India |
| |
| Abstract: | An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology. |
| |
| Keywords: | mobility SiGe strained-Si technology CAD |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
