基于半导体光放大器临界激射状态的同相波长转换

基于半导体光放大器处于放大和激射之间的临界状态 ,实现了同相波长转换 ,转换后光信号与泵浦光信号有相同的比特系列 .运用放大器中存在的自发辐射光子诱发的受激辐射和入射信号光子诱发的受激辐射之间的竞争很好地解释了实验结果 .结果表明 ,此种波长转换结构简单、输出消光比不退化

In-Phase Wavelength Conversion in Semiconductor Optical Amplifier in Critical Lasing State

In-phase wavelength conversion based on critical lasing state in a semiconductor optical amplifier has been demonstrated.The facet residual reflectivity of the SOA is only 10 -4 order that is not low enough to achieve an absolute travelling-wave amplification at large biased current,and the SOA will become a quasi-laser at certain biased current.SOA working in this critical state,the gain of the CW probe signal would be modulated by the competition between the amplified spontaneous emission and the amplification of the input signals.This conversion mechanism serves to achieve the wavelength conversion with simple structure and preferable extinction ratio performance.Whereas,it shows that its conversion efficiency and noise performance are not so good,compared with the traditional XGM wavelength conversion scheme.