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| 一种DC～5GHz串联微波开关的温度特性和功率处理能力的测试与分析 | |
| 引用本文： | Lü Miao,Zhao Zhengping,Lou Jianzhong,Gu Hongming,Hu Xiaodong,Li Qian,吕苗,赵正平,娄建忠,顾洪明,胡小东,李倩.一种DC～5GHz串联微波开关的温度特性和功率处理能力的测试与分析[J].半导体学报,2004,25(7). |
| 作者姓名： | Lü Miao Zhao Zhengping Lou Jianzhong Gu Hongming Hu Xiaodong Li Qian 吕苗 赵正平 娄建忠 顾洪明 胡小东 李倩 |
| 作者单位： | 1. Insititute of Microelectronics,Xidian University,Xi'an,710071,China;National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang,050051,China 2. Insititute of Microelectronics,Xidian University,Xi'an,710071,China 3. College of Electronic Information Engineering,Hebei University,Baoding,071002,China 4. Department of Electronic Engineering,Tsinghua University,Beijing,100084,China 5. National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang,050051,China 6. 西安电子科技大学微电子学研究所,西安,710071;河北半导体研究所砷化镓功率器件和超高速集成电路国防科技重点实验室,石家庄,050051 7. 西安电子科技大学微电子学研究所,西安,710071 8. 河北大学电子信息工程学院,保定,071002 9. 清华大学电子工程系,北京,100084 10. 河北半导体研究所砷化镓功率器件和超高速集成电路国防科技重点实验室,石家庄,050051 |
| 摘 要： | 描述了一种串联微波MEMS开关的设计、制造过程,它制作在玻璃衬底上,采用金铂触点,在DC～5GHz,插损小0.6dB,隔离度大于30dB,开关时间小于30μs.对这种微波开关的温度特性和功率处理能力进行了测试,在DC～4GHz,85℃下的插损增加了0.2dB,-55℃下的插损增加了0.4dB,而隔离度基本保持不变.在开关中流过的连续波功率从10dBm上升到35.1dBm,开关的插损下降了0.1～0.6dB,并且在35.1dBm(3.24W)下开关还能工作.和所报道的并联开关最大处理功率(420mW)相比,该结果说明串联开关具有较大的功率处理能力. |
| 关 键 词： | RF MEMS开关 温度特性 功率处理能力 |
Thermal Effects and RF Power Handling of DC～5GHz MEMS Switch |
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| Abstract: | A DC to 5GHz series MEMS switch is designed and fabricated for wireless communication applications,and thermal effect and power handling of the series switch are discussed.The switch is made on glass substrate,and gold-platinum contact is used to get a stable and little insert loss.From DC to 5GHz,0.6dB insertion loss,30dB isolation,and 30μs delay are demonstrated.Thermal effect of the switch is tested in 85℃ and－55℃ atmosphere separately.From DC to 4GHz,the insert loss of the switch increases 0.2dB in 85℃ and 0.4dB in－55℃,while the isolation holds the same value as that in room temperature.To measure the power handling capability of the switch,we applied a continuous RF power increasing from 10dBm to 35.1dBm with the step of 1.0dBm across the switch at 4GHz.The switch keeps working and shows a decrease of the insert loss for 0.1～0.6dB.The maximum continuous power handling (35.1dBm,about 3.24W) is higer than the reported value of shunt switch (about 420mW),which implies series switches have much better power handling capability. |
| Keywords: | RF MEMS switches thermal effects power handling capability |
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