| 利用高波数分辨率的显微喇曼光谱法测定AlGaN/GaN HEMT的沟道温度 |
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| 引用本文： | 张光沉,冯士维,李静婉,赵艳,郭春生.利用高波数分辨率的显微喇曼光谱法测定AlGaN/GaN HEMT的沟道温度[J].半导体学报,2012,33(4):044003-5. |
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| 作者姓名： | 张光沉 冯士维 李静婉 赵艳 郭春生 |
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| 作者单位： | 北京工业大学 |
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| 基金项目： | 北京市自然科学基金(No.4092005)，国家高技术研究发展计划（863计划）(No.2009AA032704)，高等学校博士学科点专项科研基金(No.20091103110006) |
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| 摘 要： | 本文利用高波数分辨率的显微喇曼方法测量了AlGaN/GaN 高电子迁移率晶体管(HEMT)的沟道温度。利用显微喇曼系统JYT-64000测量了GaN材料E2模的喇曼声子频率的温度特性。通过洛仑兹拟合方法，喇曼声子频率的实际测量不确定度为?0.035cm-1, 对应于GaN材料温度精度为?3.2℃，为国际所见报道的最高水平。测得的AlGaN/GaN HEMT样品的沟道-管壳热阻为22.8℃/W，与三维热传导模型的仿真结果吻合良好。给出了由显微喇曼方法、脉冲电学法及红外热像法测量出的沟道温度差别的定量分析。
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| 关 键 词： | HEMT 沟道温度，显微喇曼光谱 |
| 收稿时间： | 9/23/2011 2:17:12 PM |
Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy |
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| Zhang Guangchen,Feng Shiwei,Li Jingwan,Zhao Yan and Guo Chunsheng.Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J].Chinese Journal of Semiconductors,2012,33(4):044003-5. |
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| Authors: | Zhang Guangchen Feng Shiwei Li Jingwan Zhao Yan and Guo Chunsheng |
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| Affiliation: | School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China;Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | |
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| Keywords: | HEMT channel temperature micro-Raman spectroscopy |
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