Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on undoped AlN films |
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| Authors: | Xuewei Li Jicai Zhang Maosong Sun Binbin Ye Jun Huang Zhenyi Xu Wenxiu Dong Jianfeng Wang Ke Xu |
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| Affiliation: | 1. Platform for Characterization and Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences,Suzhou 215123, China;University of Chinese Academy of Sciences, Beijing 100049, China;2. Platform for Characterization and Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences,Suzhou 215123, China;Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China;3. Platform for Characterization and Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences,Suzhou 215123, China |
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| Abstract: | The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation.The influence of annealing temperature on the properties of contacts was investigated.When the annealing temperatures were between 800 and 950 ℃,the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature.A lowest specific contacts resistance of 0.379 Ω· cm2 was obtained for the sample annealed at 950 ℃.In this work,we confirmed that the formation mechanism of ohmic contacts on AlN was due to the formation of Al-Au,Au-Ti and Al-Ni alloys,and reduction of the specific contacts resistance could originate from the formation of Au2Ti and AlAu2 alloys.This result provided a possibility for the preparation of AlN-based high-frequency,high-power devices and deep ultraviolet devices. |
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| Keywords: | ohmic contacts AlN annealing temperature Ti/Al/Ni/Au |
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