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碱性Cu抛光液中非离子表面活性剂和氧化剂作用的研究
引用本文:袁浩博,刘玉岭,蒋勐婷,陈国栋,刘伟娟,王胜利.碱性Cu抛光液中非离子表面活性剂和氧化剂作用的研究[J].半导体学报,2015,36(1):016001-5.
作者姓名:袁浩博  刘玉岭  蒋勐婷  陈国栋  刘伟娟  王胜利
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
摘    要:化学机械抛光是集成电路制造工艺中十分精密的技术。在本文中,为了改善抛光效果,分表讨论了非离子表面活性剂和氧化剂在CMP过程中作用。我们主要分析了非离子表面活性剂对片内非均匀性和表面粗糙度的影响。同时,我们从静态腐蚀速率、电化学曲线和剩余高低差的角度,讨论了在不加BTA条件下,不同氧化剂浓度的抛光液的钝化特性。实验结果明显地表明:加入了非离子表面活性剂的抛光液,更有利于改善抛光后的片内非均匀性和表面粗糙度,并确定2vol%体积分数是比较合适的浓度。当抛光液中氧化剂浓度超过3vol%,抛光液拥有较好的钝化能力,能够有效减小高低差,并有助于获得平整和光滑的表面。根据这些实验结果,非离子表面活性剂和氧化剂的作用进一步被了解,将有助于抛光液性能的改善。

关 键 词:copper  CMP  nonionic  surfactant  within  wafer  non-uniformity  surface  roughness  electrochemical  curve  step  height
收稿时间:6/3/2014 12:00:00 AM
修稿时间:7/1/2014 12:00:00 AM

Effect of H2O2 and nonionic surfactant in alkaline copper slurry
Yuan Haobo,Liu Yuling,Jiang Mengting,Chen Guodong,Liu Weijuan and Wang Shengli.Effect of H2O2 and nonionic surfactant in alkaline copper slurry[J].Chinese Journal of Semiconductors,2015,36(1):016001-5.
Authors:Yuan Haobo  Liu Yuling  Jiang Mengting  Chen Guodong  Liu Weijuan and Wang Shengli
Affiliation:Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
Abstract:For improving the polishing performance, in this article, the roles of a nonionic surfactant (Fatty alcohol polyoxyethylene ether) and H2O2 were investigated in the chemical mechanical planarization process, respectively. Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity (WIWNU) and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.
Keywords:copper CMP  nonionic surfactant  within wafer non-uniformity  surface roughness  electrochemical curve  step height
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