| 一种光接收机中的高增益宽动态范围跨阻放大器 |
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| 引用本文： | 刘帘曦,邹姣,恩云飞,刘术彬,牛越,朱樟明,杨银堂.一种光接收机中的高增益宽动态范围跨阻放大器[J].半导体学报,2014,35(1):015001-6. |
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| 作者姓名： | 刘帘曦 邹姣 恩云飞 刘术彬 牛越 朱樟明 杨银堂 |
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| 作者单位： | [1]School of Microelectronics, Xidian University, Xi＇an 710071, China [2]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi＇an 710071, China [3]National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of ElectricalComponent, Guangzhou 510610, China |
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| 基金项目： | 高等学校博士学科点专项科研基金;高校基金;国家自然科学基金;国家高技术研究发展计划;国家重点实验室 |
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| 摘 要： | As the front-end preamplifiers in optical receivers, transimpedance amplifiers （TIAs） are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range （DR） to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.
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| 关 键 词： | 互阻放大器 宽动态范围 高增益 自动增益控制电路 光接收机 CMOS工艺 跨阻放大器 输入电流 |
A high gain wide dynamic range transimpedance amplifier for optical receivers |
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| Liu Lianxi,Zou Jiao,En Yunfei,Liu Shubin,Niu Yue,Zhu Zhangming and Yang Yintang.A high gain wide dynamic range transimpedance amplifier for optical receivers[J].Chinese Journal of Semiconductors,2014,35(1):015001-6. |
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| Authors: | Liu Lianxi Zou Jiao En Yunfei Liu Shubin Niu Yue Zhu Zhangming and Yang Yintang |
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| Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component, Guangzhou 510610, China;School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | transimpedance amplifier high gain inductive-series peaking wide dynamic range |
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| Keywords: | transimpedance amplifier high gain inductive-series peaking wide dynamic range |
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