| 成核层形貌对AlGaN/GaN异质结晶体质量，表面形貌以及电学特性的影响 |
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| 引用本文： | 段焕涛,郝跃,张进城.成核层形貌对AlGaN/GaN异质结晶体质量，表面形貌以及电学特性的影响[J].半导体学报,2009,30(10):105002-3. |
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| 作者姓名： | 段焕涛 郝跃 张进城 |
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| 作者单位： | Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China;Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China;Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China |
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| 摘 要： | Nucleation layer formation is a key factor for high quality gallium nitride（GaN）growth on a sapphire substrate.We found that the growth rate substantially affected the nucleation layer morphology,thereby having a great impact on the crystal quality,surface morphology and electrical properties of AlGaN/GaN heterostructures on sapphire substrates.A nucleation layer with a low growth rate of 2.5 nm/min is larger and has better coalescence than one grown at a high growth rate of 5 nm/min.AlGaN/GaN heterostructures on a nucleation layer with low growth rate have better crystal quality,surface morphology and electrical properties.
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| 关 键 词： | AlGaN 晶体质量 表面形貌 异质结构 电性能 形态 增长速度 蓝宝石 |
| 收稿时间： | 3/3/2009 9:42:34 AM |
| 修稿时间： | 3/31/2009 6:40:56 PM |
Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures |
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| Duan Huantao,Hao Yue and Zhang Jincheng.Effect of nucleation layer morphology on crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures[J].Chinese Journal of Semiconductors,2009,30(10):105002-3. |
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| Authors: | Duan Huantao Hao Yue and Zhang Jincheng |
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| Affiliation: | Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | Nucleation layer formation is a key factor for high quality gallium nitride (GaN) growth on a sapphire substrate. We found that the growth rate substantially affected the nucleation layer morphology, thereby having a great impact on the crystal quality, surface morphology and electrical properties of AlGaN/GaN heterostructures on sapphire substrates. A nucleation layer with a low growth rate of 2.5 nm/min is larger and has better coalescence than one grown at a high growth rate of 5 nm/min. AlGaN/GaN heterostructures on a nucleation layer with low growth rate have better crystal quality, surface morphology and electrical properties. |
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| Keywords: | MOCVD AlGaN/GaN nucleation layer |
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