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Microwave annealing effects on ZnO films deposited by atomic layer deposition
Authors:Zhao Shirui  Dong Yabin  Yu Mingyan  Guo Xiaolong  Xu Xinwei  Jing Yupeng and Xia Yang
Affiliation:Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China
Abstract:
Keywords:ZnO  microwave  annealing
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