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A 200mA CMOS low-dropout regulator with double frequency compensation techniques for SoC application
作者姓名:雷倩倩  陈治明  龚正  石寅
作者单位:西安理工大学
摘    要:This paper presents a 200mA low-dropout (LDO) linear regulator using two modified techniques for frequency compensation. One technique is that the error amplifier using common source stage with variable load, which is controlled by output current, is served as the second stage for stable frequency responses. Another technique is the LDO uses pole-zero tracking compensation technique at error amplifier to achieve good frequency response. The proposed circuit was fabricated and tested in HJTC 0.18μm CMOS technology. The designed LDO linear regulator works under the input voltage of 2.8V-5V and provides up to 200mA load current for an output voltage of 1.8V. The total error of the output voltage due to line and load variation is less than 0.015%. The LDO die area is 630*550μm2 and the quiescent current is 130μA.

关 键 词:CMOS技术  补偿技术  低压差稳压器  双频率  SoC  线性稳压器  误差放大器  应用
收稿时间:5/31/2011 8:34:02 PM
修稿时间:7/31/2011 2:07:03 PM

A 200 mA CMOS low-dropout regulator with double frequency compensation techniques for SoC applications
Lei Qianqian,Chen Zhiming,Gong Zheng and Shi Yin.A 200mA CMOS low-dropout regulator with double frequency compensation techniques for SoC application[J].Chinese Journal of Semiconductors,2011,32(11):115009-5.
Authors:Lei Qianqian  Chen Zhiming  Gong Zheng and Shi Yin
Affiliation:1 Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China 2 Suzhou-CAS Semiconductors Integrated Technology Research Center, Suzhou 215021, China
Abstract:
Keywords:linear regulator  low-dropout regulator  load transient response
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