| Space Charges Effect of Static Induction Transistor |
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| 作者姓名： | Chen Jinhuo Liu Su Wang Yongshun Li Siyuan and Zhang Fujia |
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| 作者单位： | 兰州大学物理系微电子学研究所 兰州730000
(陈金伙，刘肃，王永顺，李思渊)，兰州大学物理系微电子学研究所 兰州730000(张福甲) |
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| 摘 要： | The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I-V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.
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| 关 键 词： | 静电感应晶体管 空间电荷效应 空间电荷势垒 沟道势垒 SCLC CVBC static induction transistor space charge effect space charge potential barrier channel barrier space charge limited control channel voltage barrier control 静电感应晶体管 空间电荷效应 Static Induction Transistor Effect extreme importance grid marked potential differentiated working regions relationship space charge limited control JFET devices transferring increase drain SCLC |
Space Charges Effect of Static Induction Transistor |
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| Chen Jinhuo,Liu Su,Wang Yongshun,Li Siyuan,and Zhang Fujia.Space Charges Effect of Static Induction Transistor[J].Chinese Journal of Semiconductors,2005,26(3):423-428. |
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| Authors: | Chen Jinhuo Liu Su Wang Yongshun Li Siyuan Zhang Fujia |
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| Abstract: | The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I-V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated. |
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| Keywords: | static induction transistor space charge effect space charge potential barrier channel barrier space charge limited control channel voltage barrier control |
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