| 导致 AlGaN/GaN HEMT电学性能失效的内外因素 |
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| 引用本文： | 房玉龙,敦少博,刘波,尹甲运,蔡树军,冯志红.导致 AlGaN/GaN HEMT电学性能失效的内外因素[J].半导体学报,2012,33(5):054005-4. |
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| 作者姓名： | 房玉龙 敦少博 刘波 尹甲运 蔡树军 冯志红 |
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| 作者单位： | 专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室,专用集成电路国家级重点实验室 |
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| 摘 要： | 本文研究了不同偏置条件对AlGaN/GaN HEMT电学性能的影响。电场被认为是导致AlGaN/GaN HEMT器件电学性能退化的外因，陷阱则是内因。AlGaN/GaN HEMT器件的退化有两部分组成：可恢复退化与不可恢复退化。AlGaN/GaN HEMT器件中原本存在的陷阱与新产生的陷阱导致可恢复退化。
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| 关 键 词： | 高电子迁移率晶体管 AlGaN 器件退化 原因 电气 电场诱导 可降解 电应力 |
| 收稿时间： | 11/2/2011 2:47:36 PM |
| 修稿时间： | 1/29/2012 4:26:46 PM |
Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors |
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| Fang Yulong,Dun Shaobo,Liu Bo,Yin Jiayun,Cai Shujun and Feng Zhihong.Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors[J].Chinese Journal of Semiconductors,2012,33(5):054005-4. |
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| Authors: | Fang Yulong Dun Shaobo Liu Bo Yin Jiayun Cai Shujun and Feng Zhihong |
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| Affiliation: | Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed. The electric field applied was found to be the extrinsic cause for the device instability, while the traps were recognized as the main intrinsic factor. The effect of the traps on the device degradation was identified by recovery experiments and pulsed I-V measurements. The total degradation of the devices consists of two parts: recoverable degradation and unrecoverable degradation. The electric field induced traps combined with the inherent ones in the device bulk are mainly responsible for the recoverable degradation. |
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| Keywords: | AlGaN/GaN HEMTs electrical degradation traps inverse piezoelectric effect |
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