| 具有电流阻挡层的垂直结构氮化镓发光二级管的光电特性研究 |
| |
| 引用本文： | 郭恩卿,刘志强,汪炼成,伊晓燕,王国宏.具有电流阻挡层的垂直结构氮化镓发光二级管的光电特性研究[J].半导体学报,2011,32(6):064007-4. |
| |
| 作者姓名： | 郭恩卿 刘志强 汪炼成 伊晓燕 王国宏 |
| |
| 作者单位： | 中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所,中国科学院半导体研究所 |
| |
| 基金项目： | 国家高技术研究发展计划 |
| |
| 摘 要： | 本文对具有电流阻挡层（CBL）的氮化镓垂直结构发光二极管（LED）进行了研究。不带有CBL、带有非欧姆接触CBL和带有二氧化硅CBL的垂直LED芯片样品被制作出来，并对它们进行了光电性能的测试。结果表明这种带有非欧姆接触CBL和带有二氧化硅CBL的氮化镓垂直结构LED的光输出效率相比不带有CBL的分别高出40.6%和60.7%。不带有CBL的、带有非欧姆接触CBL和带有二氧化硅CBL的氮化镓垂直结构LED在350毫安下的效率分别下降到各自最高效率的72%、78%和85.5%。另外，带有非欧姆接触CBL的氮化镓垂直结构LED具有更优越的抗静电性能。
|
| 关 键 词： | 氮化镓发光二极管 垂直 电学特性 光学 非欧姆接触 二氧化硅 CBL LED |
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer |
| |
| Guo Enqing,Liu Zhiqiang,Wang Liancheng,Yi Xiaoyan and Wang Guohong.Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J].Chinese Journal of Semiconductors,2011,32(6):064007-4. |
| |
| Authors: | Guo Enqing Liu Zhiqiang Wang Liancheng Yi Xiaoyan and Wang Guohong |
| |
| Affiliation: | Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
| Abstract: | A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6% and 60.7% higher than that of vertical LEDs without a CBL at 350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%, 78% and 85.5% of their maximum efficiency at 350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability. |
| |
| Keywords: | current block layer efficiency drop vertical LED non-ohmic contact |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
