| X波段四路合成氮化镓功率放大器 |
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| 引用本文： | 陈炽,郝跃,冯辉,谷文萍,李志明,胡仕刚,马腾.X波段四路合成氮化镓功率放大器[J].半导体学报,2010,31(1):015003-7. |
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| 作者姓名： | 陈炽 郝跃 冯辉 谷文萍 李志明 胡仕刚 马腾 |
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| 作者单位： | National;Laboratory;Wide;Band-Gap;Semiconductor;Technology;School;Microelectronics;Xidian;University; |
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| 摘 要： | 本文利用自主研制的SiC 衬底的，栅宽为2.5mm的AlGaN/GaN HEMT器件，设计完成了X波段氮化镓合成固态放大器模块。模块由AlGaN/GaN HEMT器件，Wilkinson功率合成/分配器，偏置电路和微带匹配电路构成。为了使放大器稳定，在每一路放大器的输入端和输出端加入了RC 稳定网络，在栅极和直流输入之间加上稳定电阻，并且利用3/4 λ 枝接的威尔金森功率合成/分配器，从而有效消除其自激和低频串扰问题。在连续波条件下(直流偏置电压为Vds=27V，Vgs=-4.0V)，放大器在8GHz频率下线性增益为5dB，最大效率为17.9%，输出功率最大可为42.93dBm，此时放大器增益压缩为3dB。四路合成放大器的合成效率是67.5%。通过分析，发现了放大器合成效率的下降是由每路放大器特性的不一致、功率合成网络的损耗以及电路制造误差所造成。
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| 关 键 词： | 固态功率放大器 氮化镓 X波段 功率放大器模块 AlGaN HEMT器件 直流偏置电路 混合动力车 |
| 收稿时间： | 7/6/2009 10:10:55 PM |
| 修稿时间： | 9/7/2009 9:22:46 PM |
An X-band four-way combined GaN solid-state power amplifier |
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| Chen Chi,Hao Yue,Feng Hui,Gu Wenping,Li Zhiming,Hu Shigang and Ma Teng.An X-band four-way combined GaN solid-state power amplifier[J].Chinese Journal of Semiconductors,2010,31(1):015003-7. |
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| Authors: | Chen Chi Hao Yue Feng Hui Gu Wenping Li Zhiming Hu Shigang and Ma Teng |
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| Affiliation: | National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;National Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | |
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| Keywords: | A1GaN/GaN HEMT solid-state power amplifiers Wilkinson hybrid coupler |
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