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三值双传输管电路的通用综合方法
引用本文:杭国强.三值双传输管电路的通用综合方法[J].半导体学报,2006,27(9).
作者姓名:杭国强
作者单位:浙江大学信息与电子工程学系,杭州,310027
摘    要:提出采用双传管逻辑设计三值电路的方法,对每个MOS管的逻辑功能均采用传输运算予以表示以实现有效综合.建立了三值双传输管电路的反演法则和对偶法则.新提出的三值双传输管逻辑电路具有完全基于标准CMOS工艺,无需对MOS管作任何阈值调整,结构简单、规则,输入信号负载对称性好,逻辑摆幅完整以及无直流功耗等特点.采用TSMC 0.25μm工艺参数和最高电压为3V的HSPICE模拟结果验证了所提出综合方法的正确性.

关 键 词:开关电路理论  多值逻辑  逻辑综合  双传输管逻辑

A General Method in the Synthesis of Ternary Double Pass-Transistor Circuits
Hang Guoqiang.A General Method in the Synthesis of Ternary Double Pass-Transistor Circuits[J].Chinese Journal of Semiconductors,2006,27(9).
Authors:Hang Guoqiang
Abstract:A general method for designing ternary circuits using double pass-transistor logic is investigated. The logical relation of each MOS transistor is formulated by using the transmission operation in order to make effective and practical use of the circuits. A way to generate ternary complementary and dual circuits by applying the complementarity and duality principles is presented. This new static ternary double pass-transistor logic scheme has some favorable properties:the use of standard CMOS process without any modification of the thresholds, a perfectly symmetrical structure, a full logic swing, the maximum possible noise margins, a less complex structure, and no static power consumption. HSPICE simulations using TSMC 0.25μm CMOS technology and a 3V power supply demonstrate the effectiveness of the proposed design.
Keywords:switching circuit theory  multiple-valued logic  logic synthesis  double pass-transistor logic
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