| fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件 |
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| 引用本文： | 郝跃,岳远征,冯倩,张进城,马晓华,倪金玉.fmax为30.8GHz的超薄Al2O3绝缘栅GaN MOS-HEMT器件[J].半导体学报,2007,28(11). |
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| 作者姓名： | 郝跃 岳远征 冯倩 张进城 马晓华 倪金玉 |
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| 作者单位： | 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 报道了一种利用原子层淀积(ALD)生长超薄(3.5nm)Al2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT).新型AlGaN/GaN MOS-HEMT器件栅长1μm,栅宽120μm,栅压为+3.0V时最大饱和输出电流达到720mA/mm,最大跨导达到130mS/mm,开启电压保持在-5.0V,特征频率和最高振荡频率分别为10.1和30.8GHz.
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| 关 键 词： | AlGaN/GaN MOS-HEMT 超薄Al2O3 |
GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz |
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| Hao Yue,Yue Yuanzheng,Feng Qian,Zhang Jincheng,Ma Xiaohua,Ni Jinyu.GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz[J].Chinese Journal of Semiconductors,2007,28(11). |
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| Authors: | Hao Yue Yue Yuanzheng Feng Qian Zhang Jincheng Ma Xiaohua Ni Jinyu |
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| Abstract: | We report on a GaN metal-oxide-semiconductor high electron mobility transistor(MOS-HEMT)using atomic-layer deposited(ALD)Al2O3 as the gate dielectric.Through decreasing the thickness of the gate oxide to 3.5nm,a device with maximum transconductance of 130mS/mm is produced.The drain current of this 1μm gatelength MOS-HEMT can reach 720mA/mm at+3.0V gate bias.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 10.1 and 30.8GHz,respectively. |
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| Keywords: | AlGaN/GaN MOS-HEMT ultrathin Al2O3 |
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