| 掺杂浓度对多晶硅纳米薄膜应变系数的影响 |
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| 引用本文： | 揣荣岩,刘晓为,霍明学,宋明浩,王喜莲,潘慧艳.掺杂浓度对多晶硅纳米薄膜应变系数的影响[J].半导体学报,2006,27(7):1230-1235. |
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| 作者姓名： | 揣荣岩 刘晓为 霍明学 宋明浩 王喜莲 潘慧艳 |
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| 作者单位： | 哈尔滨工业大学MEMS中心，哈尔滨 150001;沈阳工业大学信息科学与工程学院，沈阳 110023;哈尔滨工业大学MEMS中心，哈尔滨 150001;哈尔滨工业大学MEMS中心，哈尔滨 150001;哈尔滨工业大学MEMS中心，哈尔滨 150001;哈尔滨工业大学MEMS中心，哈尔滨 150001;哈尔滨工业大学MEMS中心，哈尔滨 150001 |
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| 摘 要： | 为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型.
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| 关 键 词： | 多晶硅 纳米薄膜 压阻特性 隧道效应 应变系数 掺杂浓度 多晶硅 纳米薄膜 应变系数 影响 Polysilicon Gauge Factor Doping Level 修正模型 压阻特性 理论解释 隧道效应原理 实验分析 趋势 浓度升高 单晶硅 情况 重掺杂 结果 结构特点 |
| 文章编号： | 0253-4177(2006)07-1230-06 |
| 收稿时间： | 12 10 2005 12:00AM |
| 修稿时间： | 02 10 2006 12:00AM |
Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film |
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| Chuai Rongyan,Liu Xiaowei,Huo Mingxue,Song Minghao,Wang Xilian and Pan Huiyan.Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film[J].Chinese Journal of Semiconductors,2006,27(7):1230-1235. |
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| Authors: | Chuai Rongyan Liu Xiaowei Huo Mingxue Song Minghao Wang Xilian and Pan Huiyan |
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| Affiliation: | MEMS Center,Harbin Institute of Technology,Harbin 150001,China;School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110023,China;MEMS Center,Harbin Institute of Technology,Harbin 150001,China;MEMS Center,Harbin Institute of Technology,Harbin 150001,China;MEMS Center,Harbin Institute of Technology,Harbin 150001,China;MEMS Center,Harbin Institute of Technology,Harbin 150001,China;MEMS Center,Harbin Institute of Technology,Harbin 150001,China |
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| Abstract: | For the purpose of aiding the development of effective MEMS strain sensors using polysilicon nano-film,we investigate the relationship between the B-doped concentration and the gauge factor of LPCVD-grown polysilicon nano-film and analyze the structure of the film via scanning electron photomicrographs and X-ray diffraction-spectra.Experiments show that under a heavy doping condition,the gauge factor of the nano-film is significantly larger than that of monocrystalline silicon with the same doping level,and when the doping concentration is around 2.5E20cm-3,the gauge factor of the film increases with the increase of the doping concentration.These results are explained by the tunneling effect.A modified model of piezoresistive properties for polysilicon is then presented constructively. |
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| Keywords: | polysilicon nano-film piezoresistive property tunnel effect gauge factor |
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