| 不同氧化退火工艺下SiO2/SiC界面特性研究 |
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| 引用本文： | 闫宏丽,贾仁需,汤晓燕,宋庆文,张玉明.不同氧化退火工艺下SiO2/SiC界面特性研究[J].半导体学报,2014,35(6):066001-4. |
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| 作者姓名： | 闫宏丽 贾仁需 汤晓燕 宋庆文 张玉明 |
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| 摘 要： | The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.
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| 关 键 词： | 退火工艺 接口特性 再氧化 工艺效果 有效介电常数 X-射线光电子能谱 界面陷阱密度 电荷密度 |
| 收稿时间： | 3/9/2014 12:00:00 AM |
| 修稿时间： | 4/6/2014 12:00:00 AM |
Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics |
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| Yan Hongli,Jia Renxu,Tang Xiaoyan,Song Qingwen and Zhang Yuming.Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics[J].Chinese Journal of Semiconductors,2014,35(6):066001-4. |
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| Authors: | Yan Hongli Jia Renxu Tang Xiaoyan Song Qingwen and Zhang Yuming |
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| Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | SiO2/SiC re-oxidation annealing effective dielectric charge interface trap |
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| Keywords: | SiO2/SiC re-oxidation annealing effective dielectric charge interface trap |
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