A novel double-trench LVTSCR used in the ESD protection of a RFIC |
| |
| Authors: | Li Li Liu Hongxia |
| |
| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University, Xi'an 710071, China |
| |
| Abstract: | A low-voltage triggering silicon-controlled rectifier(LVTSCR),for its high efficiency and low parasitic parameters,has many advantages in ESD protection,especially in ultra-deep sub-micron(UDSM) IC and high frequency applications.In this paper,the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail.These parameters include anode series resistance,gate voltage,structure and size of devices.In addition,a double-trench LVTSCR is presented th... |
| |
| Keywords: | UDSM LVTSCR RFIC ESD design window |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
