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Removal of impurities from metallurgical grade silicon by electron beam melting
Authors:Luo Dawei  Liu Ning  Lu Yiping  Zhang Guoliang  and Li Tingju
Affiliation:1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
2. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China;Ministry of Education Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
Abstract:Solar cells are currently fabricated from a variety of silicon-based materials.Now the major silicon material for solar cells is the scrap of electronic grade silicon (EG-Si).But in the current market it is difficult to secure a steady supply of this material.Therefore,alternative production processes are needed to increase the feedstock.In this paper,EBM is used to purify silicon.MG-Si particles after leaching with an initial purity of 99.88% in mass as starting materials were used.The final purity of the silicon disk obtained after EBM was above 99.995% in mass.This result demonstrates that EBM can effectively remove impurities from silicon.This paper mainly studies the impurity distribution in the silicon disk after EBM.
Keywords:silicon refining  electron beam melting  metallurgical grade silicon  solar grade silicon
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