| 大功率低阈值980nm单模AlGaInAs/AlGaAs量子阱激光器 |
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| 作者姓名： | Dong Zhen Wang Cuiluan Jing Hongqi Liu Suping Ma Xiaoyu |
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| 作者单位： | National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences |
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| 基金项目： | 军用电子元器件科研项目 |
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| 摘 要： | To achieve low threshold current as well as high single mode output power,a graded index separate confinement heterostructure(GRIN-SCH)AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated.The threshold current was reduced to 8 mA.An output power of 76 mW was achieved at100 mA current at room temperature,with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3.The maximum single mode output power of the device reached as high as 450 mW.
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| 关 键 词： | semiconductor laser low threshold ridge waveguide single mode |
| 修稿时间： | 6/4/2013 12:00:00 AM |
High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current |
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| Dong Zhen,Wang Cuiluan,Jing Hongqi,Liu Suping,Ma Xiaoyu.High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current[J].Chinese Journal of Semiconductors,2013,34(11):114011-4. |
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| Authors: | Dong Zhen Wang Cuiluan Jing Hongqi Liu Suping and Ma Xiaoyu |
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| Affiliation: | National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW. |
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| Keywords: | semiconductor laser low threshold ridge waveguide single mode |
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