| MOSFET不同厚度薄栅老化中 SILC的机制 |
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| 引用本文： | 王子欧,卫建林,毛凌锋,许铭真,谭长华.MOSFET不同厚度薄栅老化中 SILC的机制[J].半导体学报,2001,22(4):414-417. |
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| 作者姓名： | 王子欧 卫建林 毛凌锋 许铭真 谭长华 |
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| 作者单位： | 北京大学微电子研究所，北京100871 |
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| 摘 要： | 通过对栅电流和栅电压漂移的测量 ,证明了均匀 FN应力老化后栅氧化层中陷阱呈非均匀分布 .不同厚度的栅氧化层产生 SIL C的机制不尽相同 ,薄栅以陷阱辅助隧穿为主 ,类 Pool- Frankel机制在厚二氧化硅栅中起主导作用 .
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| 关 键 词： | 应力感应漏电 栅氧化层 |
| 文章编号： | 0253－4177（2001）04-0414-04 |
| 修稿时间： | 2000年9月21日 |
SILC Mechanism in Degraded Gate Oxide of Different Thickness |
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| WANG Zi-ou.SILC Mechanism in Degraded Gate Oxide of Different Thickness[J].Chinese Journal of Semiconductors,2001,22(4):414-417. |
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| Authors: | WANG Zi-ou |
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| Abstract: | It is shown that traps are generated asymmetrically in the thin gate oxides with different thickness during high field degradation,as well as the multi-mechanism plays role in the Stress Induced Leakage Current (SILC).These factors perform differently in gate oxide of different thickness.A comparison is drew between several analyzing models.Trap assisted tunneling is preferred for thinner samples,while Pool-Frankel like mechanism or thermal emission mechanism should apply to the thick ones. |
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| Keywords: | SILC gate oxide |
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