| 负阻异质结晶体管的模拟与实验 |
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| 引用本文： | 李建恒,张世林,郭维廉,齐海涛,梁惠来,毛陆虹.负阻异质结晶体管的模拟与实验[J].半导体学报,2005,26(12):2416-2421. |
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| 作者姓名： | 李建恒 张世林 郭维廉 齐海涛 梁惠来 毛陆虹 |
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| 作者单位： | 天津大学电子信息工程学院,微电子系,天津,300072;天津大学电子信息工程学院,微电子系,天津,300072;天津大学电子信息工程学院,微电子系,天津,300072;天津大学电子信息工程学院,微电子系,天津,300072;天津大学电子信息工程学院,微电子系,天津,300072;天津大学电子信息工程学院,微电子系,天津,300072 |
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| 摘 要： | 采用MBE方法生长了8nm基区的InGaP/GaAs双异质结材料,研制成具有负阻特性的异质结晶体管.在恒压恒流条件下均观察到了负阻特性并对其物理机制进行了讨论.推导出集电极电流Ic与VCE的关系表达式,讨论了负阻与器件结构和参数的关系.使用PSPICE模拟软件建立电路网表模型,代入推导出的IC-VCE公式进行模拟,模拟结果与器件的测量结果十分接近.
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| 关 键 词： | 异质结晶体管 负阻特性 薄基区 电路模拟 |
| 文章编号： | 0253-4177（2005）12-2416-06 |
| 收稿时间： | 2005-06-29 |
| 修稿时间： | 2005-08-22 |
Fabrication and Simulation of NDRHBT |
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| Li Jianheng,Zhang Shilin,Guo Weilian,Qi Haitao,Liang Huilai and Mao Luhong.Fabrication and Simulation of NDRHBT[J].Chinese Journal of Semiconductors,2005,26(12):2416-2421. |
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| Authors: | Li Jianheng Zhang Shilin Guo Weilian Qi Haitao Liang Huilai and Mao Luhong |
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| Affiliation: | School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China |
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| Abstract: | A thin base (8nm) InGaP/GaAs dual heterojunction material is grown by MBE and a heterojunction bipolar transistor (HBT) with negative differential resistance (NDR) is fabricated.The NDR is observed at constant voltage and current.A physical analysis of this device is presented.The physical I_C-V_CE formulas are derived and the relation between the NDR and the structure and parameters of this device is discussed.The circuit net list model is compiled by PSPICE including the I_C-V_CE formulas and the simulated result is close to the measured outcome. |
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| Keywords: | heterojunction bipolar transistor negative differential resistance thin base circuit simulation |
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