| SiC/nc-Si多层薄膜的光致可见发光谱的紧束缚理论 |
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| 引用本文： | 梁志均,王志斌,王莉,赵福利,阳生红,何振辉,陈弟虎.SiC/nc-Si多层薄膜的光致可见发光谱的紧束缚理论[J].半导体学报,2006,27(13):72-75. |
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| 作者姓名： | 梁志均 王志斌 王莉 赵福利 阳生红 何振辉 陈弟虎 |
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| 作者单位： | 中山大学物理系 光电材料与技术国家重点实验室,广州 510275;中山大学物理系 光电材料与技术国家重点实验室,广州 510275;中山大学物理系 光电材料与技术国家重点实验室,广州 510275;中山大学物理系 光电材料与技术国家重点实验室,广州 510275;中山大学物理系 光电材料与技术国家重点实验室,广州 510275;中山大学物理系 光电材料与技术国家重点实验室,广州 510275;中山大学物理系 光电材料与技术国家重点实验室,广州 510275 |
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| 摘 要： | 用Vogl提出的sp3s紧束缚模型来研究碳化硅/纳米硅（SiC/nc-Si）多层薄膜的能带结构与其光致发光谱的关系，并设计出SiC/nc-Si多层薄膜最佳结构为{Si}1{SiC}8，即碳化硅层的厚度是纳米硅层厚度的8倍时的超晶格结构蓝光发射的效率最高. 在等离子体增强化学气相沉积系统中,通过控制进入反应室的气体种类逐层沉积含氢非晶SiCx∶H(a-SiCx∶H)和非晶Si∶H (a-Si∶H) 薄膜,然后经过高温热退火处理,成功制备出了晶化纳米SiC/nc-Si(多晶SiC和纳米Si)多层薄膜. 利用截面透射电子显微镜技术分析了a-SiCx∶H/nc-Si∶H多层薄膜的结构特性,表明制得的超晶格结构稍微偏离设计，它的结构为{Si}1{SiC}5. 最后对晶化样品的光致发光谱进行研究，详细分析了各个光致发光峰的物理本质.
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| 关 键 词： | 超晶格 紧束缚理论 SiC/nc-Si多层膜 光致发光 |
Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film |
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| Liang Zhijun,Wang Zhibin,Wang Li,Zhao Fuli,Yang Shenghong,He Zhenhui and Chen Dihu.Tight Binding of Photoluminescence in the SiC/nc-Si Multi-Layer Film[J].Chinese Journal of Semiconductors,2006,27(13):72-75. |
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| Authors: | Liang Zhijun Wang Zhibin Wang Li Zhao Fuli Yang Shenghong He Zhenhui and Chen Dihu |
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| Affiliation: | State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China;State Key Laboratory of Optoelectronic Materials and Technologies,Department of Physics,Sun Yat-Sen University,Guangzhou 510275,China |
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| Abstract: | Based on the sp3s tight-binding model proposed by Vogl,the relationship between the band structure and photoluminescence (PL) of the SiC/nc-Si multi-layer is studied.An optimal design of the structure of the SiC/nc-Si multi-layer is presented,theoretically indicating that the {Si}1{SiC}8 supper lattice possesses the highest efficiency of emitting blue light.Multiple SiCx/nc-Si films is fabricated by plasma enhanced chemical vapor deposition and high temperature thermal oxidation.And the structure characteristics of the multiple films is studied by TEM,revealing that the structure of the fabricated multiple films is {Si}1{SiC}5,which is slightly different from the ideal design.Finally,the experimental results of the PL spectrum are analyzed theoretically,and the mechanism of the each light emitting peak is discussed in detail. |
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| Keywords: | superlattice tight binding SiC/nc-Si multi-layer film photoluminescence |
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