| 溶胶-凝胶法制备Bi2O3-ZnO-Nb2O5薄膜及GaNMIS结构C-V特性 |
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| 引用本文： | 舒斌,张鹤鸣,王青,黄大鹏,宣荣喜.溶胶-凝胶法制备Bi2O3-ZnO-Nb2O5薄膜及GaNMIS结构C-V特性[J].半导体学报,2007,28(9):1406-1410. |
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| 作者姓名： | 舒斌 张鹤鸣 王青 黄大鹏 宣荣喜 |
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| 作者单位： | 西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071;西安电子科技大学微电子学院，宽禁带半导体材料与器件教育部重点实验室，西安 710071 |
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| 摘 要： | 采用溶胶-凝胶法制备出高介电常数的Bi2O3-ZnO-Nb2Os(BZN)薄膜.总结出适合作为GaN金属-绝缘层-半导体场效应晶体管(MIS FET)栅介质的BZN薄膜的原料配比、烧结温度和保温时间等工艺参数,解决了原料溶解、粘稠度、浸润度等工艺问题.同时,结合半导体工艺制造出以BZN薄膜为绝缘介质的GaN MIS结构,通过测量到的高频C-V特性曲线,得到薄膜的相对介电常数为91,MIS结构的强反型电压为-3.4V,平带电压为-1.9V.
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| 关 键 词： | 溶胶-凝胶 铋锌铌薄膜 金属-绝缘层-半导体结构 电容-电压曲线 |
| 文章编号： | 0253-4177（2007）09-1406-05 |
| 收稿时间： | 1/27/2007 2:47:28 PM |
| 修稿时间： | 4/13/2007 2:40:23 AM |
Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure |
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| Shu Bin,Zhang Heming,Wang Qing,Huang Dapeng and Xuan Rongxi.Bi2O3-ZnO-Nb2O5 Film Fabricated by Sol-Gel Technique and C-V Characteristic of GaN MIS Structure[J].Chinese Journal of Semiconductors,2007,28(9):1406-1410. |
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| Authors: | Shu Bin Zhang Heming Wang Qing Huang Dapeng and Xuan Rongxi |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | |
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| Keywords: | sol-gel BZN film MIS structure C-V curve |
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