| 掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用 |
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| 引用本文： | 孙福河,张晓丹,赵颖,王世峰,韩晓艳,李贵军,魏长春,孙建,侯国付,张德坤,耿新华,熊绍珍.掺杂室沉积本征微晶硅材料及其在太阳能电池中的应用[J].半导体学报,2008,29(5):855-858. |
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| 作者姓名： | 孙福河 张晓丹 赵颖 王世峰 韩晓艳 李贵军 魏长春 孙建 侯国付 张德坤 耿新华 熊绍珍 |
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| 作者单位： | [1]南开大学光电子薄膜器件与技术研究所,天津300071 [2]南开大学光电子薄膜器件与技术天津市重点实验室,天津300071 [3]光电信息技术科学教育部重点实验室（南开大学,天津大学）,天津300071 |
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| 基金项目： | 国家高技术研究发展计划(863计划);国家重点基础研究发展计划(973计划);国家自然科学基金;科技部国际科技合作项目 |
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| 摘 要： | 在掺杂P室采用甚高频等离子体增强化学气相沉积（VHF—PECVD）技术，制备了不同硅烷浓度条件下的本征微晶硅薄膜．对薄膜电学特性和结构特性的测试结果分析表明：随硅烷浓度的增加，材料的光敏性先略微降低后提高，而晶化率的变化趋势与之相反；X射线衍射（xRD）测试表明材料具有（220）择优晶向．在P腔室中用VHF—PECVD方法制备单结微晶硅太阳能电池的i层和p层，其光电转换效率为4．7％，非晶硅／微晶硅叠层电池（底电池的p层和i层在P室沉积）的效率达8．5％．
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| 关 键 词： | 甚高频等离子体增强化学气相沉积 本征微晶硅 太阳能电池 |
| 文章编号： | 0253-4177(2008)05-0855-04 |
| 修稿时间： | 10/5/2007 3:05:13 PM |
Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells |
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| Sun Fuhe,Zhang Xiaodan,Zhao Ying,Wang Shifeng,Han Xiaoyan,Li Guijun,Wei Changchun,Sun Jian,Hou Guofu,Zhang Dekun,Geng Xinhua and Xiong Shaozhen.Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells[J].Chinese Journal of Semiconductors,2008,29(5):855-858. |
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| Authors: | Sun Fuhe Zhang Xiaodan Zhao Ying Wang Shifeng Han Xiaoyan Li Guijun Wei Changchun Sun Jian Hou Guofu Zhang Dekun Geng Xinhua and Xiong Shaozhen |
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| Affiliation: | Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc;Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China ;Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China;Key Laboratory of Opto-Electronic Information Scienc |
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| Abstract: | A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change.Results of XRD indicate that thin films have a (220) preferable orientation under certain conditions.Microcrystalline silicon solar cells with conversion efficiency 4.7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD (p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber),respectively. |
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| Keywords: | VHF-PECVD intrinsic microcrystalline silicon solar cells |
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