有机半导体薄膜三极管的研制

采用真空蒸镀法和有机半导体材料酞菁铜,制作Au/CuPc/Al/ CuPc/Au三明治结构的肖特基型栅极有机静电感应三极管.该三极管导电沟道垂直于CuPc薄膜,与采用MOSFET结构的有机薄膜三极管相比导电沟道大幅缩短,有利于克服有机半导体电学性能的缺点.实验结果表明,该三极管驱动电压低,呈不饱和电流-电压特性.其工作特性依赖于栅极电压和梳状铝电极的结构.通过合理设计、制作梳状铝电极,获得了良好的三极管静态、动态特性.

Fabrication of Organic Semiconductor Thin Film Transistor

Organic static induction transistors (OSIT) with schottky gate electrode of Au/CuPc/Al/CuPc/Au sandwich structure are fabricated by the method of vacuum evaporation and the evaporated films of organic semiconductor copper phthalocyanine (CuPc) as the active layers.The conductor channel of OSIT perpendicular to the surface of the CuPc film is largely shorter than that of metal oxide semiconductor field effect transistor (MOSFET), which avails to overcome the shortcoming of electrical characteristics of organic semiconductor.The experimental results manifest the low driver voltage and no saturated current voltage characteristics of OSIT.The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.Good static and dynamic characteristics of OSIT are obtained by properly designing the structure of pectinate Al electrode.