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一种带热滞回保护的高精度高电源抑制比带隙基准源
引用本文:杨银堂,李娅妮,朱樟明.一种带热滞回保护的高精度高电源抑制比带隙基准源[J].半导体学报,2010,31(9):095010-5.
作者姓名:杨银堂  李娅妮  朱樟明
作者单位:Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Min&try of Education, Institute of Microelectronics, Xidian University, Xi 'an 710071, China
基金项目:supported by the National Natural Science Foundation of China(Nos.60725415 60971066); the National High-Tech Research and Development Program of China(Nos.2009AA01Z258 2009AA01Z260); the National Science & Technology Important Project of China(No.2009ZX01034-002-001-005)
摘    要:To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits, a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations. In addition, an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed. Based on the CSMC 0.5 μ m 20 V BCD process, the designed circuit is implemented; the active die area is 0.17 × 0.20 mm2. Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from –40 to 150 ℃, the power supply rejection ratio is –98.2 dB, the line regulation is 0.3 mV/V, and the power consumption is only 0.38 mW. The proposed bandgap voltage reference has good characteristics such as small area, low power consumption, good temperature stability, high power supply rejection ratio, as well as low line regulation. This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog, digital and mixed systems.

关 键 词:带隙基准  保护电路  高精度  电源抑制比  热滞  电压基准  温度系数  集成电路

A high precision high PSRR bandgap reference with thermal hysteresis protection
Yang Yintang,Li Yani and Zhu Zhangming.A high precision high PSRR bandgap reference with thermal hysteresis protection[J].Chinese Journal of Semiconductors,2010,31(9):095010-5.
Authors:Yang Yintang  Li Yani and Zhu Zhangming
Affiliation:Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Institute of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Institute of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Institute of Microelectronics, Xidian University, Xi'an 710071, China
Abstract:
Keywords:bandgap voltage reference  curvature-compensated  power supply rejection ratio  over-temperature protection  BCD process
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