Optical and electrical characteristics of GaN vertical light emitting diode with current block layer |
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Authors: | Guo Enqing Liu Zhiqiang Wang Liancheng Yi Xiaoyan Wang Guohong |
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Affiliation: | Research and Development Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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Abstract: | A GaN vertical light emitting diode(LED)with a current block layer(CBL)was investigated.Vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated.Optical and electrical tests were carried out.The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,respectively.The efficiencies of vertical LEDs without a CBL,with a non-ohmi... |
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Keywords: | current block layer efficiency drop vertical LED non-ohmic contact |
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