| 微波大功率SiGe HBT的研究进展及其应用 |
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| 引用本文： | 徐剑芳,李成,赖虹凯.微波大功率SiGe HBT的研究进展及其应用[J].微电子学,2005,35(5):521-526. |
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| 作者姓名： | 徐剑芳 李成 赖虹凯 |
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| 作者单位： | 厦门大学物理系,半导体光子学研究中心,福建厦门361005 |
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| 基金项目： | 国家自然科学基金，福建省青年科技人才创新基金 |
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| 摘 要： | 文章论述了SiGe异质结双极晶体管(HBT)在微波功率领域应用的优势,详细介绍了微波功率SiGe HBT的结构设计方法,以及主要影响器件性能的材料和结构因素,评述了其最新进展及今后发展方向.
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| 关 键 词： | 异质结双极晶体管 微波 大功率 |
| 文章编号： | 1004-3365（2005）05-0521-06 |
| 收稿时间： | 2005-01-10 |
| 修稿时间： | 2005-01-102005-03-25 |
Progress in the Development of Microwave High Power SiGe HBT's and Its Applications |
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| XU Jian-fang, LI Cheng, LAI Hong-kai.Progress in the Development of Microwave High Power SiGe HBT''''s and Its Applications[J].Microelectronics,2005,35(5):521-526. |
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| Authors: | XU Jian-fang LI Cheng LAI Hong-kai |
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| Affiliation: | Department of Physics, Semiconductor Photonics Research Center, Xiamen University , Xiamen, Fujian 361005, P. R. China |
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| Abstract: | Advantages of SiGe heterojunction bipolar transistors(HBT's) in the application to microwave power field are reviewed.Further described in detail is the methodology in the structural design of microwave power SiGe HBT's,as well as the effects of material and structure on the device performance.Latest progress in this field is presented and the direction of future development is discussed. |
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| Keywords: | SiGe |
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