| MOCVD法制备TiO_2薄膜的光电化学性质研究 |
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| 引用本文： | 魏培海,姚发业,王娅娟.MOCVD法制备TiO_2薄膜的光电化学性质研究[J].山东师范大学学报(自然科学版),2000(2). |
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| 作者姓名： | 魏培海 姚发业 王娅娟 |
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| 作者单位： | 山东教育学院化学系!250013，济南，山东教育学院化学系!250013，济南，山东教育学院化学系!250013，济南 |
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| 基金项目： | 山东省自然科学基金资助项目 !(Q98B0 712 3) |
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| 摘 要： | 采用金属有机化学气相沉积 (MOCVD)法制备了TiO2 薄膜 ,测定了TiO2 薄膜的晶体结构 ,以 p -Si为基底电极 ,研究了TiO2 薄膜的光电化学性质 .经TiO2 修饰的p-Si电极 ,开路光电位增加近 2 0倍 ,并表现出很强的稳定性 ,是较理想的光电极材料及光电极修饰材料 .
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| 关 键 词： | 金属有机化学气相沉积 二氧化钛 光电化学 |
PHOTOELECTROCHEMICAL PROPERTITES OF THE TIO_2 THIN FILM PREPARED BY MOCVD METHOD |
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| Wei Peihai,Yao Faye,Wang Yajuan.PHOTOELECTROCHEMICAL PROPERTITES OF THE TIO_2 THIN FILM PREPARED BY MOCVD METHOD[J].Journal of Shandong Normal University(Natural Science),2000(2). |
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| Authors: | Wei Peihai Yao Faye Wang Yajuan |
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| Abstract: | Titanium dioxide thin film was prepared by Metallorganic chemical Vapour Deposition (MOCVD) Method.The crystal structure of the film was identified and the photoelectrochemical properties of TiO 2 on the surface of p-Si electrode were studied.In the presence of the TiO 2 film,the open circuit photo-potential of p-Si was 20 times that of the bare one.It was proved that the TiO 2 film is very stable and would be an ideal photoelectrode material and an photoelectrode modifing material. |
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| Keywords: | MOCVD titanium dioxide photoelectrochemistry |
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