| SiO2薄膜热应力模拟计算 |
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| 引用本文： | 吴靓臻,唐吉玉,马远新,孔蕴婷,文于华,陈俊芳.SiO2薄膜热应力模拟计算[J].华南师范大学学报(自然科学版),2009,1(1):52. |
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| 作者姓名： | 吴靓臻 唐吉玉 马远新 孔蕴婷 文于华 陈俊芳 |
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| 作者单位： | 1.华南师范大学 |
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| 摘 要： | 摘要:薄膜内应力严重影响薄膜在实际中的应用.本文采用有限元模型对SiO2薄膜热应力进行模拟计算，验证了模型的准确性.同时计算了薄膜热应力的大小和分布，分别分析了不同镀膜温度、不同膜厚和不同基底厚度生长环境下热应力的大小，得到了相应的变化趋势图, 对薄膜现实生长具有一定的指导意义.
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| 关 键 词： | 热应力 SiO2薄膜 有限元 模拟 |
| 收稿时间： | 2008-01-07 |
SIMULATION OF THERMAL STRESS IN SiO_2 THIN FILM |
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| WU Liang-zhen,TANG Jie-yu,MA Yuan-xin,KONG Yun-ting,WEN Yu-hua,CHEN Jun-fang.SIMULATION OF THERMAL STRESS IN SiO_2 THIN FILM[J].Journal of South China Normal University(Natural Science Edition),2009,1(1):52. |
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| Authors: | WU Liang-zhen TANG Jie-yu MA Yuan-xin KONG Yun-ting WEN Yu-hua CHEN Jun-fang |
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| Affiliation: | 1.School of Physics and Telecommunication Engineering;South China Normal University;Guangzhou 510631;China;2.Section of Physics;Medical University of Xinjiang;Urumqi 830054;China |
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| Abstract: | The internal stress in thin film affects the application of thin film strongly.The finite element modeling method was used to simulate the thermal stress in SiO2 thin film,and the rationality of the model was proved.The film thermal stress on the size and distribution was calculated,and different results were obtained by changing the growth temperature,the film thickness and the fundus thickness,respectively.The result was in a good agreement with the theory. |
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| Keywords: | thermal stress SiO2 thin film finite element simulation |
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