| 新一代CMOS器件栅介质材料研究进展 |
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| 引用本文： | 郭鸣,周松华,刘昌鑫.新一代CMOS器件栅介质材料研究进展[J].井冈山大学学报（自然科学版）,2011(5):76-81. |
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| 作者姓名： | 郭鸣 周松华 刘昌鑫 |
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| 作者单位： | 井冈山大学电子与信息工程学院; |
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| 基金项目： | 江西省教育厅科技项目(GJJ11181、GJJ08417); 井冈山大学博士科研启动基金项目; 华东师范大学优秀博士研究生培养基金(20080051) |
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| 摘 要： | 随着微电子技术的飞速发展,按照摩尔定律发展的要求,SiO2的极限厚度已经成为Si基集成电路提高集成度的瓶颈。寻求代替SiO2的其它新一代高k栅介质已成为当今微电子技术发展的必然趋势。文章介绍了几种最有可能成为下一代栅介质的高k材料,并对其研究进展和存在的问题进行了阐述。
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| 关 键 词： | 高介电常数 栅介质 等效氧化层厚度 漏电流 |
THE STUDYING PROGRESS ON THE NEXT GENERATION GATE DIELECTRIC MATERIALS FOR CMOS DEVICES |
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| GUO Ming,ZHOU Song-hu,LIU Chang-xin.THE STUDYING PROGRESS ON THE NEXT GENERATION GATE DIELECTRIC MATERIALS FOR CMOS DEVICES[J].Journal of Jinggangshan University(Natural Sciences Edition),2011(5):76-81. |
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| Authors: | GUO Ming ZHOU Song-hu LIU Chang-xin |
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| Affiliation: | GUO Ming,ZHOU Song-hua,LIU Chang-xin(School of Electronics and Information Engineering,Jingganshan University,Ji'an,Jiangxi 343000,China) |
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| Abstract: | With the rapid development of microelectronics,the limited thickness of SiO2 has been the node of evaluating the Si-based integrated circuits by Moore's Law.In order to overcome the scaling limitation,a replacement of SiO2 with dielectrics having a higher dielectric constant is unavoidable.Several promising alternatives of gate dielectric material are introduced.The latest development of high-k materials is reviewed,and some problems are also discussed. |
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| Keywords: | High-k gate dielectrics equivalent oxide thickness leakage current |
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