| POSFET压电传感器结构参数与特性的研究 |
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| 引用本文： | 李斌,刘百勇.POSFET压电传感器结构参数与特性的研究[J].华南理工大学学报(自然科学版),1994,22(5):53-57. |
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| 作者姓名： | 李斌 刘百勇 |
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| 作者单位： | 华南理工大学应用物理系，深圳天马微电子公司 |
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| 摘 要： | 本文分析了ＰＯＳＦＥＴ压电传感器的结构参数与特性。理论分析表明ＰＶＤＦ薄膜的声学灵敏度与膜的厚度和膜的弹性刚性系数成正比。实验结果显示，ＰＯＳＦＥＴ传感器的输出峰值随扩展栅面积的增加而增大，随沟道长度的减小而增大。ＰＯＳＦＥＴ传感器的灵敏度比之ＰＶＤＦ直接粘贴硅背衬传感结构提高了２０ｄＢ。
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| 关 键 词： | 聚偏聚乙烯膜 压电传感器 自动控制 |
RESEARCH ON POSFET PIEZOELECTRIC SENSORS: THE STRUCTURE PARAMETERS AND THE CHARACTERISTICS |
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| Li Bin, Liu Baiyong, Zheng Xuern, Shao Zhennan and Wu Zhaohui.RESEARCH ON POSFET PIEZOELECTRIC SENSORS: THE STRUCTURE PARAMETERS AND THE CHARACTERISTICS[J].Journal of South China University of Technology(Natural Science Edition),1994,22(5):53-57. |
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| Authors: | Li Bin Liu Baiyong Zheng Xuern Shao Zhennan and Wu Zhaohui |
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| Abstract: | In this paper, the characteristics of POSFET piezoelectric sensors construceted by covering the MOS transistor with polyvinylidne fluoride film ate reported. Theoretical results show that the piezoelectric sensing sensitivity of PVDF film is proportional to film thickness and inversely proportional to the elasticity constant S. Experimental results reveal that the peak value of the output voltage of POSFET increases with extended gate area and decreases as the channel length increases. The ultrasonic sensing sensitivity of POSFET piezoelectric sensors is of 20dB larger than that of the sencors without MOS device backing. |
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| Keywords: | s: polyvinylidne fluoride semiconductor sensors piezoelectric sensors POSFET |
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